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warp2 series igbt withultrafast soft recovery diode ? low v ce(on) npt technology, positive temperature coefficient ? lower parasitic capacitances ? minimal tail current ? hexfred ultra fast soft-recovery co-pack diode ? tighter distribution of parameters ? lead-free, rohs compliant ? automotive qualified * benefits ? parallel operation for higher current applications ? lower conduction losses and switching losses ? higher switching frequency up to 150khz e g n-channel c v ces = 600v v ce(on) typ. = 2.00v @ v ge = 15v i c = 33a equivalent mosfet parameters r ce(on) typ. = 61m i d (fet equivalent) = 50a
? automotive hev and ev ? pfc and zvs smps circuits absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25 c, unless otherwise specified. g c e gate collector emitter to-247ac AUIRGP50B60PD1 g c e g c e to-247ad AUIRGP50B60PD1-e parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 75 i c @ t c = 100c continuous collector current 45 i cm pulse collector current (ref. fig. c.t.4) 150 i lm clamped inductive load current 150 a i f @ t c = 25c diode continous forward current 40 i f @ t c = 100c diode continous forward current 15 i frm maximum repetitive forward current 60 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 390 w p d @ t c = 100c maximum power dissipation 156 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.32 c/w r jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 1.7 r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC CCC 40 weight CCC 6.0 (0.21) CCC g (oz) * qualification standards can be found at http://www.irf.com/

base part number package type standard pack complete part number form quantity AUIRGP50B60PD1 to-247ac tube 25 AUIRGP50B60PD1 AUIRGP50B60PD1e to-247ad tube 25 AUIRGP50B60PD1e ordering information

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notes: r ce(on) typ. = equivalent on-resistance = v ce(on) typ./ i c , where v ce(on) typ.= 2.00v and i c =33a. i d (fet equivalent) is the equivalent mosfet i d rating @ 25c for applications up to 150khz. these are provided for comparison purposes (only) with equivalent mosfet solutions. v cc = 80% (v ces ), v ge = 15v, l = 28 h, r g = 22 . pulse width limited by max. junction temperature. energy losses include "tail" and diode reverse recovery, data generated with use of diode 30eth06. c oes eff. is a fixed capacitance that gives the same charging time as c oes while v ce is rising from 0 to 80% v ces . c oes eff.(er) is a fixed capacitance that stores the same energy as c oes while v ce is rising from 0 to 80% v ces . calculated continuous current based on maximum allowable junction temperature. package current limit is 60a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 6 0 0v v ge = 0v, i c = 500 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0 . 3 1v / c v ge = 0v, i c = 1ma (25c-125c) r g internal gate resistance 1.7 1mhz, open collector 2 . 0 02 . 3 5 i c = 33a, v ge = 15v 4, 5,6,8,9 v ce(on) collector-to-emitter saturation voltage 2.45 2.85 v i c = 50a, v ge = 15v 2 . 6 02 . 9 5 i c = 33a, v ge = 15v, t j = 125c 3 . 2 03 . 6 0 i c = 50a, v ge = 15v, t j = 125c v ge(th) gate threshold voltage 3.0 4.0 5.0 v i c = 250 a 7,8,9 ? v ge(th) / ? tj threshold voltage temp. coefficient -10 mv/c v ce = v ge , i c = 1.0ma gfe forward transconductance 41 s v ce = 50v, i c = 33a, pw = 80 s i ces collector-to-emitter leakage current 5.0 500 a v ge = 0v, v ce = 600v 1 . 0m a v ge = 0v, v ce = 600v, t j = 125c v fm diode forward voltage drop 1.30 1.70 v i f = 15a, v ge = 0v 10 1 . 2 01 . 6 0 i f = 15a, v ge = 0v, t j = 125c i ges gate-to-emitter leakage current 100 na v ge = 20v, v ce = 0v static or switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) 205 308 i c = 33a 17 q gc gate-to-collector charge (turn-on) 70 105 nc v cc = 400v ct1 q ge gate-to-emitter charge (turn-on) 30 45 v ge = 15v e on turn-on switching loss 255 305 i c = 33a, v cc = 390v ct3 e off turn-off switching loss 375 445 j v ge = +15v, r g = 3.3 , l = 200 h e total total switching loss 630 750 tj = 25c t d(on) turn-on delay time 30 40 i c = 33a, v cc = 390v ct3 t r rise time 10 15 ns v ge = +15v, r g = 3.3 , l = 200 h t d(off) turn-off delay time 130 150 t j = 25c t f fall time 11 15 e on turn-on switching loss 580 700 i c = 33a, v cc = 390v ct3 e off turn-off switching loss 480 550 j v ge = +15v, r g = 3.3 , l = 200 h 11,13 e total total switching loss 1060 1250 t j = 125c wf1,wf2 t d(on) turn-on delay time 26 35 i c = 33a, v cc = 390v ct3 t r rise time 13 20 ns v ge = +15v, r g = 3.3 , l = 200 h 12,14 t d(off) turn-off delay time 146 165 t j = 125c wf1,wf2 t f fall time 15 20 c ies input capacitance 3648 v ge = 0v 16 c oes output capacitance 322 v cc = 30v c res reverse transfer capacitance 56 pf f = 1mhz c oes eff. effective output capacitance (time related) 2 1 5 v ge = 0v, v ce = 0v to 480v 15 c oes eff. (er) effective output capacitance (energy related) 1 6 3 t j = 150c, i c = 150a 3 rbsoa reverse bias safe operating area full square v cc = 480v, vp =600v ct2 rg = 22 , v ge = +15v to 0v t rr diode reverse recovery time 42 60 ns t j = 25c i f = 15a, v r = 200v, 19 7 41 2 0 t j = 125c di/dt = 200a/ s q rr diode reverse recovery charge 80 180 nc t j = 25c i f = 15a, v r = 200v, 21 220 600 t j = 125c di/dt = 200a/ s i rr peak reverse recovery current 4.0 6.0 a t j = 25c i f = 15a, v r = 200v, 19,20,21,22 6 . 51 0 t j = 125c di/dt = 200a/ s ct5 conditions downloaded from: http:///

fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - reverse bias soa t j = 150c; v ge =15v fig. 4 - typ. igbt output characteristics t j = -40c; tp = 80 s fig. 5 - typ. igbt output characteristics t j = 25c; tp = 80 s fig. 6 - typ. igbt output characteristics t j = 125c; tp = 80 s 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 250 300 350 400 450 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 012345678910 v ce (v) 0 20 40 60 80 100 120 140 160 180 200 i c e ( a ) v ge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 20 40 60 80 100 120 140 160 t c (c) 0 10 20 30 40 50 60 70 80 90 i c ( a ) downloaded from: http:///

fig. 8 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = 125c fig. 12 - typ. switching time vs. i c t j = 125c; l = 200 h; v ce = 390v, r g = 3.3 ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 11 - typ. energy loss vs. i c t j = 125c; l = 200 h; v ce = 390v, r g = 3.3 ; v ge = 15v. diode clamp used: 30eth06 (see c.t.3) fig. 10 - typ. diode forward characteristics tp = 80 s fig. 7 - typ. transfer characteristics v ce = 50v; tp = 10 s 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 0 5 10 15 20 v ge (v) 1 2 3 4 5 6 7 8 9 10 v c e ( v ) i ce = 15a i ce = 33a i ce = 50a 0 1 02 03 04 05 06 0 i c (a) 0 200 400 600 800 1000 1200 e n e r g y ( j ) e off e on 0 10 20 30 40 50 60 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 5 10 15 20 v ge (v) 0 100 200 300 400 500 600 700 800 900 i c e ( a ) t j = 25c t j = 125c t j = 125c t j = 25c 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f i nst ant aneous f or w ard c urrent - i (a ) forward voltage drop - v (v) t = 150c t = 125c t = 25c jj j downloaded from: http:///

fig. 14 - typ. switching time vs. r g t j = 125c; l = 200 h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 13 - typ. energy loss vs. r g t j = 125c; l = 200 h; v ce = 390v, i ce = 33a; v ge = 15v diode clamp used: 30eth06 (see c.t.3) fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 15 - typ. output capacitance stored energy vs. v ce fig. 17 - typical gate charge vs. v ge i ce = 33a 0 5 10 15 20 25 r g ( ) 300 400 500 600 700 800 900 1000 e n e r g y ( j ) e on e off 0 5 10 15 20 25 r g ( ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 200 250 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 400v 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 100 200 300 400 500 600 700 v ce (v) 0 10 20 30 40 e o e s ( j ) fig. 18 - normalized typ. v ce(on) vs. junction temperature i c = 33a, v ge = 15v -50 0 50 100 150 200 t j (c) 0.8 1.0 1.2 1.4 n o r m a l i z e d v c e ( o n ) ( v ) downloaded from: http:///

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# &'"# $# # $#"# $# 20 40 60 80 100 100 1000 f di /dt - (a/ s) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c rj j 1 10 100 100 1000 f di /dt - (a/ s) i - (a) irrm i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c rj j 0 200 400 600 800 100 1000 f di /dt - (a/ s) rr q - (nc) i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c rj j 100 1000 100 1000 f di /dt - (a/ s) di(rec)m/dt - (a/ s) i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c rj j downloaded from: http:///
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fig. 24. maximum transient thermal impedance, junction-to-case (diode) fig 23. maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.363 0.0001120.864 0.001184 0.473 0.032264 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.157 0.0003460.163 4.28 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri downloaded from: http:///
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fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit l rg 80 v dut 480v 1k vcc du t 0 l fig.c.t.4 - resistive load circuit rg vcc dut r = v cc i cm fig.c.t.3 - switching loss circuit fig. c.t.5 - reverse recovery parameter test circuit reverse recovery circuit irfp250 d.u.t. l = 70 h v = 200v r 0.01 g d s dif/dt adjust pfc diode l rg vcc dut / driver downloaded from: http:///
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fig. wf1 - typ. turn-off loss waveform @ t j = 25c using fig. ct.3 fig. wf2 - typ. turn-on loss waveform @ t j = 25c using fig. ct.3 fig. wf3 - reverse recovery waveform and definitions -100 -50 0 50 100 150 200 250 300 350 400 450 500 550 600 -0.20 0.00 0.20 0.40 time ( s) v ce (v) -10 0 10 20 30 40 50 60 i ce (a) 90% i ce 5% i ce 5% v ce eof f tf -50 0 50 100 150 200 250 300 350 400 450 -0.10 0.00 0.10 0.20 time( s) v ce (v) -10 0 10 20 30 40 50 60 70 80 90 i ce (a) 90% i ce 5% v ce 10% i ce eon loss tr test current

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